EFFECT OF HEAVY DOPING ON PROPERTIES OF HIGH-LOW JUNCTION

被引：20

作者：

SINHA, A

CHATTOPADHYAYA, SK

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1978年 / 25卷 / 12期

关键词：

D O I：

10.1109/T-ED.1978.19366

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1412 / 1414

页数：3

共 16 条

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[8] MINORITY-CARRIER REFLECTING PROPERTIES OF SEMICONDUCTOR HIGH-LOW JUNCTIONS [J].

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[9] FUNDAMENTAL ELECTRONIC MECHANISMS LIMITING PERFORMANCE OF SOLAR-CELLS [J].

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