EFFECTIVE RECOMBINATION VELOCITY AT THE NN+ INTERFACE

被引：16

作者：

RAM, GV ^{[1
]}

TYAGI, MS ^{[1
]}

机构：

[1] INDIAN INST TECHNOL,PROGRAM MAT SCI,KANPUR 208016,UTTAR PRADESH,INDIA

来源：

SOLID-STATE ELECTRONICS | 1981年 / 24卷 / 08期

关键词：

D O I：

10.1016/0038-1101(81)90057-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：753 / 761

页数：9

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