Observation of the Mott-Gurney law in tris (8-hydroxyquinoline) aluminum films

被引：90

作者：

Kiy, M ^{[1
]}

Losio, P ^{[1
]}

Biaggio, I ^{[1
]}

Koehler, M ^{[1
]}

Tapponnier, A ^{[1
]}

Günter, P ^{[1
]}

机构：

[1] ETH Honggerberg, Inst Quantum Elect, Nonlinear Opt Lab, Swiss Fed Inst Technol Zurich, CH-8093 Zurich, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 07期

关键词：

D O I：

10.1063/1.1449527

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We show that tris (8-hydroxyquinoline) aluminum (Alq(3)) thin films produced and characterized under ultrahigh vacuum conditions present a well-defined squared-law dependence of the injected current on the applied voltage at applied electric fields of the order of 0.25-1 MV/cm. From this, one derives an electric-field-independent electron mobility of the order of 10(-7) cm(2)/(V s), with a variation between different samples of about one order of magnitude. Observations of current-voltage characteristics with clear indications of trap-filling and space-charge-limited conduction at high fields in Alq(3) excludes the existence of traps with an exponential distribution of trap energies, as is commonly assumed in amorphous materials. (C) 2002 American Institute of Physics.

引用

页码：1198 / 1200

页数：3

共 27 条

[1]

[Anonymous], 1940, CHEM ED, DOI DOI 10.1021/ED018P249.1

[2] Electron mobility in tris(8-hydroxy-quinoline)aluminum thin films determined via transient electroluminescence from single- and multilayer organic light-emitting diodes [J].