Vibrational activation in direct and precursor-mediated chemisorption of SiH4 on Si(100)

被引:21
作者
Bisson, Regis [1 ]
Dang, Tung T. [1 ]
Sacchi, Marco [1 ]
Beck, Rainer D. [1 ]
机构
[1] Ecole Polytech Fed Lausanne, Lab Chim Phys Mol, CH-1015 Lausanne, Switzerland
关键词
D O I
10.1063/1.2976563
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The quantum state-resolved reactivity S-0 of SiH4 on Si(100)-2x1 has been measured for the first time for two vibrationally excited Si-H stretch local mode states (vertical bar 2000 > and vertical bar 1100 >) as well the ground state S-0 as a function of translational energy En and surface temperature T-s. We observe evidence for both direct and precursor-mediated chemisorption pathways. As expected, increasing En (or T-s) decreases S-0 for the precursor-mediated reaction and increases S0 for the direct chemisorption. However, vibrational excitation of the incident SiH4 increases S-0 for both the direct and the precursor-mediated pathway with a higher S-0 for the vertical bar 2000 > state than for the vertical bar 1100 > state, indicating a nonstatistical reaction mechanism. (c) 2008 American Institute of Physics.
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页数:4
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