Graphene-Based Atomic-Scale Switches

被引:303
作者
Standley, Brian [1 ]
Bao, Wenzhong [2 ]
Zhang, Hang [2 ]
Bruck, Jehoshua [3 ]
Lau, Chun Ning [2 ]
Bockrath, Marc [1 ]
机构
[1] CALTECH, Dept Appl Phys, Pasadena, CA 91125 USA
[2] Univ Calif Riverside, Dept Phys & Astron, Riverside, CA 92521 USA
[3] CALTECH, Dept Elect Engn, Pasadena, CA 91125 USA
基金
美国国家科学基金会;
关键词
D O I
10.1021/nl801774a
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Graphene's remarkable mechanical and electrical properties, combined with its compatibility with existing planar silicon-based technology, make it an attractive material for novel computing devices. We report the development of a nonvolatile memory element based on graphene break junctions. Our devices have demonstrated thousands of writing cycles and long retention times. We propose a model for device operation based on the formation and breaking of carbon atomic chains that bridge the junctions. We demonstrate information storage based on the concept of rank coding, in which information is stored in the relative conductance of graphene switches in a memory cell.
引用
收藏
页码:3345 / 3349
页数:5
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