共 93 条
Dialkoxybithiazole: A New Building Block for Head-to-Head Polymer Semiconductors
被引:192
作者:
Guo, Xugang
[1
,2
,3
]
Quinn, Jordan
[4
]
Chen, Zhihua
[4
]
Usta, Hakan
[4
]
Zheng, Yan
[4
]
Xia, Yu
[4
]
Hennek, Jonathan W.
[1
,2
]
Ortiz, Rocio Ponce
[1
,2
,5
]
Marks, Tobin J.
[1
,2
]
Facchetti, Antonio
[1
,2
,4
]
机构:
[1] Northwestern Univ, Dept Chem, Evanston, IL 60208 USA
[2] Northwestern Univ, Mat Res Ctr, Evanston, IL 60208 USA
[3] S Univ Sci & Technol China, Dept Chem, Shenzhen 518055, Guangdong, Peoples R China
[4] Polyera Corp, Skokie, IL 60077 USA
[5] Univ Malaga, Dept Phys Chem, E-29071 Malaga, Spain
基金:
美国国家科学基金会;
关键词:
THIN-FILM TRANSISTORS;
FIELD-EFFECT TRANSISTORS;
STRUCTURE-PROPERTY RELATIONSHIPS;
HIGH-PERFORMANCE;
HIGH-MOBILITY;
CHARGE-TRANSPORT;
POLYTHIOPHENE SEMICONDUCTORS;
AMBIPOLAR SEMICONDUCTORS;
CONJUGATED POLYMERS;
DEVICE PERFORMANCE;
D O I:
10.1021/ja3120532
中图分类号:
O6 [化学];
学科分类号:
0703 ;
摘要:
Polymer semiconductors have received great attention for organic electronics due to the low fabrication cost offered by solution-based printing techniques. To enable the desired solubility/processability and carrier mobility, polymers are functionalized with hydrocarbon chains by strategically manipulating the alkylation patterns. Note that head-to-head (HH) linkages have traditionally been avoided because the induced backbone torsion leads to poor pi-pi overlap and amorphous film microstructures, and hence to low carrier mobilities. We report here the synthesis of a new building block for HH linkages, 4,4'-dialkoxy-5,5'-bithiazole (BTzOR), and its incorporation into polymers for high performance organic thin-film transistors. The small oxygen van der Waals radius and intramolecular S(thiazolyl)center dot center dot center dot O(alkoxy) attraction promote HH macromolecular architectures with extensive pi-conjugation, low bandgaps (1.40-1.63 eV), and high crystallinity. In comparison to previously reported 3,3'-dialkoxy-2,2'-bithiophene (BTOR), BTzOR is a promising building block in view of thiazole geometric and electronic properties: (a) replacing (thiophene)C-H with (thiazole)N reduces steric encumbrance in -BTzOR-Ar- dyads by eliminating repulsive C-H center dot center dot center dot H-C interactions with neighboring arene units, thereby enhancing pi-pi overlap and film crystallinity; and (b) thiazole electron-deficiency compensates alkoxy electron-donating characteristics, thereby lowering the BTzOR polymer HOMO versus that of the BTOR analogues. Thus, the new BTzOR polymers show substantial hole mobilities (0.06-0.25 cm(2)/(V s)) in organic thin-film transistors, as well as enhanced I-on:I-off ratios and greater ambient stability than the BTOR analogues. These geometric and electronic properties make BTzOR a promising building block for new classes of polymer semiconductors, and the synthetic route to BTzOR reported here should be adaptable to many other bithiazole-based building blocks.
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页码:1986 / 1996
页数:11
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