A finite difference scheme solving the Boltzmann-Poisson system for semiconductor devices

被引：52

作者：

Majorana, A ^{[1
]}

Pidatella, RM ^{[1
]}

机构：

[1] Univ Catania, Dipartimento Matemat & Informat, I-95125 Catania, Italy

来源：

JOURNAL OF COMPUTATIONAL PHYSICS | 2001年 / 174卷 / 02期

关键词：

Boltzmann equation; difference schemes; semiconductors;

D O I：

10.1006/jcph.2001.6929

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

The Boltzmann equation describing electron flow in semiconductor devices is considered. The collision operator models the scattering processes between free electrons and phonons in thermal equilibrium. The doping profile and the self-consistent electric field are related by the Poisson equation. The coupled system is solved by using a simple numerical scheme based on finite differences. Hydrodynarnical variables are obtained by integrating the distribution function. Numerical results are shown for a one-dimensional n(+) - n - n(+) silicon diode. (C) 2001 Elsevier Science.

引用

页码：649 / 668

页数：20

共 11 条

[1] Extended hydrodynamical model of carrier transport in semiconductors [J].