Extended hydrodynamical model of carrier transport in semiconductors

被引：60

作者：

Anile, AM

Romano, V

Russo, G

机构：

[1] Univ Catania, Dipartmento Matemat, I-95125 Catania, Italy

[2] Politecn Bari, Dipartimento Interuniv Matemat, I-75125 Bari, Italy

[3] Univ Aquila, Dipartimento Matemat, I-67100 Laquila, Italy

来源：

SIAM JOURNAL ON APPLIED MATHEMATICS | 2000年 / 61卷 / 01期

关键词：

semiconductors; hydrodynamical model for charge transport; hyperbolic systems; shock-capturing numerical methods for conservation laws;

D O I：

10.1137/S003613999833294X

中图分类号：

O29 [应用数学];

学科分类号：

070104 ;

摘要：

A hydrodynamical model based on the theory of extended thermodynamics is presented for carrier transport in semiconductors. Closure relations for fluxes are obtained by employing the maximum entropy principle. The production terms are modeled by fitting the Monte Carlo data for homogeneously doped semiconductors. The mathematical properties of the model are studied. A suitable numerical method, which is a generalization of the Nessyahu-Tadmor scheme to the nonhomogeneous case, is provided. The validity of the constitutive relations has been assessed by comparing the numerical results with detailed Monte Carlo simulations.

引用

页码：74 / 101

页数：28

共 47 条

[1] THERMODYNAMIC DERIVATION OF THE HYDRODYNAMICAL MODEL FOR CHARGE TRANSPORT IN SEMICONDUCTORS [J].