Electrical characterization of transparent p-i-n heterojunction diodes

被引：83

作者：

Hoffman, RL ^{[1
]}

Wager, JF

Jayaraj, MK

Tate, J

机构：

[1] Oregon State Univ, Dept Elect & Comp Engn, Corvallis, OR 97331 USA

[2] Oregon State Univ, Dept Phys, Corvallis, OR 97331 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2001年 / 90卷 / 11期

关键词：

D O I：

10.1063/1.1413710

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Transparent p-i-n heterojunction diodes are fabricated using heavily doped, p-type CuYO2 and semi-insulating i-ZnO thin films deposited onto a glass substrate coated with n-type indium tin oxide. Rectification is observed, with a ratio of forward-to-reverse current as high as 60 in the range -4-4 V. The forward-bias current-voltage characteristics are dominated by the flow of space-charge-limited current, which is ascribed to single-carrier injection into the i-ZnO layer. Capacitance measurements show strong frequency dispersion, which is attributed to i-ZnO traps. The diode structure has a total thickness of 0.75 mum and an optical transmission of similar to 35%-65% in the visible region. (C) 2001 American Institute of Physics.

引用

页码：5763 / 5767

页数：5

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