Hysteresis in organic field-effect devices: Simulated effects due to trap recharging

被引:33
作者
Lindner, T
Paasch, G
Scheinert, S
机构
[1] Leibniz Inst Solid State & Mat Res, D-01171 Dresden, Germany
[2] Tech Univ Ilmenau, Inst Solid State Elect, D-98684 Ilmenau, Germany
[3] Tech Univ Ilmenau, Ctr Micro & Nanotechnol, D-98684 Ilmenau, Germany
关键词
D O I
10.1063/1.2138377
中图分类号
O59 [应用物理学];
学科分类号
摘要
Current organic field-effect transistors feature predominantly undesirable hysteresis effects which appear also in the capacitance-voltage (CV) characteristics of organic metal-oxide-semiconductor (MOS) capacitors. So far, these effects are not sufficiently characterized experimentally and their origin is even less understood. In the literature one finds presumptions that they are caused by trap recharging or by mobile ions (in the organic semiconductor or in the insulator). In order to check the first of these presumptions, detailed numerical simulations have been carried out. Hysteresis in the field effect is studied at best in the MOS capacitor without the additional influence of the source/drain contacts of the transistor. Although there are differences between quasistatic and dynamic measurements, our simulations are done for the quasistatic CV characteristics since they already give the desired information for the understanding of the hysteresis effects. Organic semiconductors with different types of traps of different energetic positions, concentrations, and energetic and spatial distributions are considered and their parameters are varied in a wide range. Trap recharging is connected with the transport of the emitted (captured) carriers from (to) the traps during the voltage sweep. It is demonstrated that rather different types of hysteresis can occur thereby. All of the simulated shapes of the hysteresis are qualitatively different from that one which is typically observed experimentally. Therefore, it should be ruled out that the hysteresis observed in organic MOS devices is solely caused by trap recharging. The observed changes of the CV characteristics for a variation of different measuring conditions and parameters indicate that the hysteresis is caused by at least two different processes. We suppose that the origin of the hysteresis in organic devices is a combination of slow transport (polarons or mobile ions) with a reaction other than trap recharging, e.g., the direct polaron-bipolaron reaction or a complex formation reaction of polarons/bipolarons with counterions.
引用
收藏
页数:9
相关论文
共 29 条
  • [1] Precursor route pentacene metal-insulator-semiconductor field-effect transistors
    Brown, AR
    Pomp, A
    deLeeuw, DM
    Klaassen, DBM
    Havinga, EE
    Herwig, P
    Mullen, K
    [J]. JOURNAL OF APPLIED PHYSICS, 1996, 79 (04) : 2136 - 2138
  • [2] Field-effect transistors made from solution-processed organic semiconductors
    Brown, AR
    Jarrett, CP
    deLeeuw, DM
    Matters, M
    [J]. SYNTHETIC METALS, 1997, 88 (01) : 37 - 55
  • [3] Optical spectroscopy of field-induced charge in self-organized high mobility poly(3-hexylthiophene)
    Brown, PJ
    Sirringhaus, H
    Harrison, M
    Shkunov, M
    Friend, RH
    [J]. PHYSICAL REVIEW B, 2001, 63 (12)
  • [4] Low-cost all-polymer integrated circuits
    Drury, CJ
    Mutsaers, CMJ
    Hart, CM
    Matters, M
    de Leeuw, DM
    [J]. APPLIED PHYSICS LETTERS, 1998, 73 (01) : 108 - 110
  • [5] SOLITONS IN CONDUCTING POLYMERS
    HEEGER, AJ
    KIVELSON, S
    SCHRIEFFER, JR
    SU, WP
    [J]. REVIEWS OF MODERN PHYSICS, 1988, 60 (03) : 781 - 850
  • [6] Gate voltage dependent mobility of oligothiophene field-effect transistors
    Horowitz, G
    Hajlaoui, R
    Fichou, D
    El Kassmi, A
    [J]. JOURNAL OF APPLIED PHYSICS, 1999, 85 (06) : 3202 - 3206
  • [7] Wide energy-window view on the density of states and hole mobility in poly(p-phenylene vinylene) -: art. no. 166601
    Hulea, IN
    Brom, HB
    Houtepen, AJ
    Vanmaekelbergh, D
    Kelly, JJ
    Meulenkamp, EA
    [J]. PHYSICAL REVIEW LETTERS, 2004, 93 (16) : 166601 - 1
  • [8] Contact kinetics in conducting polymers
    Kirova, N
    Brazovskii, S
    [J]. SYNTHETIC METALS, 1996, 76 (1-3) : 229 - 232
  • [9] Amorphouslike density of gap states in single-crystal pentacene
    Lang, DV
    Chi, X
    Siegrist, T
    Sergent, AM
    Ramirez, AP
    [J]. PHYSICAL REVIEW LETTERS, 2004, 93 (08) : 086802 - 1
  • [10] Organic complementary ring oscillators
    Lin, YY
    Dodabalapur, A
    Sarpeshkar, R
    Bao, Z
    Li, W
    Baldwin, K
    Raju, VR
    Katz, HE
    [J]. APPLIED PHYSICS LETTERS, 1999, 74 (18) : 2714 - 2716