copper selenide;
optical properties;
thermo-emf;
solar cells;
D O I:
10.1016/j.vacuum.2005.08.021
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
Deposition of polycrystalline copper (1) selenide thin films onto glass Substrates at relatively low temperature (95 degrees C) have been carried out by chemical route using optimized preparative conditions. The XRD pattern confirmed formation of copper (1) selenide semiconducting films with orthorhombic structure. A direct-type transition band gap energy of 1.73eV was reported from optical absorption studies. p-Type behavior confirmed front sign thermally induced voltage (thermo-emf), which may find interesting applications in hetero-junction solar cells as absorber layer. (c) 2005 Elsevier Ltd. All rights reserved.