Structural characterization of chemically deposited Bi2S3 and Bi2Se3 thin films

被引:58
作者
Lokhande, CD [1 ]
Sankapal, BR
Mane, RS
Pathan, HM
Muller, M
Giersig, M
Tributsch, H
Ganeshan, V
机构
[1] Shivaji Univ, Dept Phys, Thin Film Phys Lab, Kolhapur 416004, Maharashtra, India
[2] Hahn Meitner Inst Berlin GmbH, D-14109 Berlin, Germany
[3] IUC DAE, Low Temp Lab, Indore, India
关键词
thin films; chemical deposition; nanostructure;
D O I
10.1016/S0169-4332(01)00813-3
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Simple and inexpensive chemical deposition methods were used to deposit bismuth trisulfide (Bi2S3) and bismuth triselenide (Bi2Se3) thin films onto amorphous glass substrate at relatively low temperatures. Deposition parameters are optimized to get nanocrystalline films. These films are used for structural. surface morphological and compositional analyses. Stoichiometry and film formation are confirmed by X-ray diffraction (XRD) and energy dispersive X-ray analysis (EDAX) and Rutherford back scattering (RBS) analyses. Surface coverage and roughness of the films are studied from scanning electron microscopy (SEM) and atomic force microscopy (AFM) images. High resolution transmission electron microscopy (HRTEM) study has confirmed the nanostructure of Bi2S3 and Bi2Se3 films. (C) 2002 Published by Elsevier Science B.V.
引用
收藏
页码:108 / 115
页数:8
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