Dislocation formation mechanism in strained InxGa1-xAs islands grown on GaAs(001) substrates

被引：67

作者：

Chen, Y ^{[1
]}

Lin, XW ^{[1
]}

LilientalWeber, Z ^{[1
]}

Washburn, J ^{[1
]}

Klem, JF ^{[1
]}

Tsao, JY ^{[1
]}

机构：

[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 01期

关键词：

D O I：

10.1063/1.116773

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The formation mechanism of misfit dislocations in lattice-mismatched InxGa1-xAs epilayers (0.2 less than or equal to x less than or equal to 1) grown on GaAs substrates has been investigated experimentally. The results suggest that 1/3(111) Frank partial dislocations are grown-in at island edges in highly lattice-mismatched epilayers (x greater than or equal to 0.4). Then after further island growth 90 degrees Shockley partial dislocations are nucleated to remove the stacking faults, reacting with the Frank partials to form complete 90 degrees dislocations. An atomic model is proposed to explain the formation mechanism of the Frank partial dislocation. This model could explain the observed change in the dominant type of dislocation from the 60 degrees at small mismatches to 90 degrees edge dislocations at large lattice mismatches. (C) 1996 American Institute of Physics.

引用

页码：111 / 113

页数：3

共 17 条

[1] CHARACTERISTICS OF DISLOCATIONS AT STRAINED HETEROEPITAXIAL INGAAS/GAAS INTERFACES [J].