Initial stage of ultra-thin SiO2 formation at low temperatures using activated oxygen

被引：20

作者：

Fuyuki, T

Muranaka, S

Matsunami, H

机构：

[1] Dept. of Electron. Sci. and Eng., Kyoto University, Sakyo, Kyoto 606-01, Yoshidahonmachi

来源：

APPLIED SURFACE SCIENCE | 1997年 / 117卷

关键词：

remote plasma; activated oxygen; ultra-thin SiO2; low-temperature oxidation; SiO2/Si interface;

D O I：

10.1016/S0169-4332(97)80064-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The initial stage of oxidation of Si by activated oxygen species is investigated in detail based on the measurements by XPS. Thin SiO2 films were found to grow following the parabolic law and the estimated activation energy of the oxidation rate was about one order of magnitude smaller than that in the thermal oxidation case in a substrate temperature range of 300-500 degrees C, which shows the activated oxygen enhanced the oxidation process. The obtained oxidation rate of a 10(-2)-10(-1) nm/min range is appropriate to realize the atomically controlled interface formation.

引用

页码：123 / 126

页数：4