Study of factors limiting electron mobility in InSb quantum wells

被引：40

作者：

Chung, SJ ^{[1
]}

Goldammer, KJ

Lindstrom, SC

Johnson, MB

Santos, MB

机构：

[1] Univ Oklahoma, Dept Phys & Astron, Norman, OK 73019 USA

[2] Univ Oklahoma, Lab Elect Properties Mat, Norman, OK 73019 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1999年 / 17卷 / 03期

关键词：

D O I：

10.1116/1.590712

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We observe a significant increase in InSb quantum-well mobility when remote doping of Al0.09In0.91Sb barriers is accomplished by three layers, rather than one layer, of Si delta doping. At 7 K, the electron mobility in single quantum-well structures grown on GaAs substrates is as high as 280 000 cm(2)/V s with an electron density of 2.33 x 10(11) cm(-2). The density of oriented abrupt steps and square-mound features on the sample surface correlates with the electron mobility in the well. (C) 1999 American Vacuum Society. [S0734-211X(99)04203-1].

引用

页码：1151 / 1154

页数：4

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