Characterization of tin dioxide film for chemical vapors sensor

被引：28

作者：

Hafaiedh, I. ^{[1
]}

Helali, S. ^{[1
]}

Cherif, K. ^{[1
]}

Abdelghani, A. ^{[1
]}

Tournier, G. ^{[2
]}

机构：

[1] IPEST, Unite Rech Phys Semicond & Capteurs, La Marsa 2070, Tunisia

[2] Ecole Natl Super Mines, F-42023 St Etienne, France

来源：

MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS | 2008年 / 28卷 / 5-6期

关键词：

AFM; FTIR; impedance Spectroscopy; tin dioxide; chemical vapors detection;

D O I：

10.1016/j.msec.2007.10.064

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Recently, oxide semiconductor material used as transducer has been the central topic of many studies for gas sensor. In this paper we investigated the characteristic of a thick film of tin dioxide (SnO2) film for chemical vapor sensor. It has been prepared by screen-printing technology and deposited on alumina substrate provided with two gold electrodes. The morphology, the molecular composition and the electrical properties of this material have been characterized respectively by Atomic Force Spectroscopy (AFM), Fourier Transformed Infrared Spectroscopy (FTIR) and Impedance Spectroscopy (IS). The electrical properties showed a resistive behaviour of this material less than 300 degrees C which is the operating temperature of the sensor. The developed sensor can identify the nature of the detected gas, oxidizing or reducing. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：584 / 587

页数：4

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