The interface kinetics of crystal growth processes

被引:154
作者
Jackson, KA [1 ]
机构
[1] Univ Arizona, Dept Mat Sci & Engn, Tucson, AZ 85712 USA
基金
美国国家航空航天局;
关键词
crystallization kinetics; kinetic Monte Carlo; solute trapping;
D O I
10.1023/A:1015824230008
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A brief review of the present state of our understanding of the kinetic processes which take place on the atomic scale at the interface during crystal growth is presented in this paper. Computer simulations have played a central role in the development of this understanding. Three aspects will be discussed: (1) There are two classes of materials based on their different modes of crystallization. Molecular dynamics modeling has demonstrated that the growth rate for many simple materials is not thermally activated, but instead depends on the thermal velocity of the atoms. (2) The cooperative processes which give rise to the surface roughening transition. Kinetic Monte Carlo studies played a central role in the development of our understanding of how interface roughness dominates growth morphologies. (3) Solute trapping in alloys. Kinetic Monte Carlo simulations of alloys have led to an understanding of these kinetic effects during alloy crystallization.
引用
收藏
页码:159 / 169
页数:11
相关论文
共 45 条
[1]   GROWTH OF SI SINGLE-CRYSTALS FROM MELT AND IMPURITY INCORPORATION MECHANISMS [J].
ABE, T .
JOURNAL OF CRYSTAL GROWTH, 1974, 24 (OCT) :463-467
[2]   Parameter-free test of alloy dendrite-growth theory [J].
Arnold, CB ;
Aziz, MJ ;
Schwarz, M ;
Herlach, DM .
PHYSICAL REVIEW B, 1999, 59 (01) :334-343
[3]   SOLUTE TRAPPING - COMPARISON OF THEORY WITH EXPERIMENT [J].
AZIZ, MJ ;
TSAO, JY ;
THOMPSON, MO ;
PEERCY, PS ;
WHITE, CW .
PHYSICAL REVIEW LETTERS, 1986, 56 (23) :2489-2492
[4]   SOLUTE TRAPPING IN SILICON BY LATERAL MOTION OF (111) LEDGES [J].
AZIZ, MJ ;
WHITE, CW .
PHYSICAL REVIEW LETTERS, 1986, 57 (21) :2675-2678
[5]  
AZIZ MJ, 1985, MATER RES SOC S P, V35, P153
[6]   ORIENTATION AND VELOCITY DEPENDENCE OF SOLUTE TRAPPING IN SI [J].
BAERI, P ;
FOTI, G ;
POATE, JM ;
CAMPISANO, SU ;
CULLIS, AG .
APPLIED PHYSICS LETTERS, 1981, 38 (10) :800-802
[7]   DEPENDENCE OF TRAPPING AND SEGREGATION OF INDIUM IN SILICON ON THE VELOCITY OF THE LIQUID-SOLID INTERFACE [J].
BAERI, P ;
POATE, JM ;
CAMPISANO, SU ;
FOTI, G ;
RIMINI, E ;
CULLIS, AG .
APPLIED PHYSICS LETTERS, 1980, 37 (10) :912-914
[8]  
BAERI P, 1981, MATER RES SOC S P, V1, P67
[9]   Orientation dependence of the distribution coefficient obtained from a spin-1 Ising model [J].
Beatty, KM ;
Jackson, KA .
JOURNAL OF CRYSTAL GROWTH, 1997, 174 (1-4) :28-34
[10]   Monte Carlo modeling of silicon crystal growth [J].
Beatty, KM ;
Jackson, KA .
JOURNAL OF CRYSTAL GROWTH, 2000, 211 (1-4) :13-17