CVD growth of 3C-SiC on SOI (100) substrates with optimized interface structure

In this paper we have investigated the CVD growth of 3C-SiC on SOI (100) substrates at reduced temperatures employing a carbonization step with a slow temperature heating-ramp. The carbonization leads to a rapid sealing of the Si-top layer of the SOI substrate due to a high SIC nucleation density totally avoiding the commonly reported formation of cavities at the 3C-SiC/Si interface. From TEM investigations it can be shown that the crystallinity of the 3C-SiC is comparable to state-of-the-art SIC thin films on Si. Exploiting this growth process 5 mu m thick 3C-SiC layers on Si (100) show excellent crystal quality with a FWHM = 0.18 degrees derived from X-ray omega-rocking curves. This is confirmed by electrical characterization using Hall measurements. (C) 1999 Elsevier Science S.A. All rights reserved.