Prevention of micropipes and voids at β-SiC/Si(100) interfaces

被引：33

作者：

Scholz, R ^{[1
]}

Gosele, U

Wischmeyer, F

Niemann, E

机构：

[1] Max Planck Inst Mikrostrukturphys, D-06120 Halle, Germany

[2] Daimler Benz Forschungsinst, D-60528 Frankfurt, Germany

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1998年 / 66卷 / 01期

关键词：

D O I：

10.1007/s003390050638

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Chemical vapor deposition (CVD) carbonization experiments were carried out on (100) silicon substrates. Scanning and transmission electron microscopy (SEM and TEM) were used to detect and characterize the interface de defects. Conditions for preventing the formation of micropipes and voids at the SiC/Si interfaces were found.

引用

页码：59 / 67

页数：9

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