SIC FILM FORMATION ON SI(001) BY REACTION WITH C2H2 BEAMS

β-SiC films on Si(001) have been formed by direct reaction of Si crystal with C2H2 molecular beams in ultra-high vacuum. Depth profiles of the C/Si composition ratio of the films have been measured by an Auger electron spectrometer combined with an Ar+ ion sputtering gun. The structures and topographies of the films were observed by SEM and TEM. The growth rate of the film has been found to be proportional to the reaction time and the beam flux under low beam flux condition. However, the growth rate decreased at high temperatures. In this case, the surface under reaction was covered with a Si-rich layer and the epitaxial growth of SiC crystals was observed on the substrate. In the substrate pyramidally shaped corrosion along the (111) face was observed by TEM. In the etched parts SiC was also formed by reaction with C-containing reactants. Under high beam flux condition, the surface of the growing film was covered with a C-rich layer and the growth rate decreased. In this case, the grown film consisted of polycrystals and was covered with hillocks. © 1990.