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Scaling properties of InAs/GaAs self-assembled quantum dots

被引：25
作者：
Ebiko, Y
Muto, S
Suzuki, D
Itoh, S
Yamakoshi, H
Shiramine, K
Haga, T
Unno, K
Ikeda, M
机构：
[1] Hokkaido Univ, Dept Appl Phys, Kita Ku, Sapporo, Hokkaido 0608628, Japan
[2] Hokkaido Univ, Div Elect & Informat Engn, Kita Ku, Sapporo, Hokkaido 0608628, Japan
来源：
PHYSICAL REVIEW B | 1999年 / 60卷 / 11期
关键词：
D O I：
10.1103/PhysRevB.60.8234
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We studied the scaling law for volume distribution of the self-assembled quantum dots grown by molecular-beam epitaxy of the Stranski-Krastanow mode. The scaling law was found to hold regardless of the annealing time and growth temperature. Also, we found the scaling law for the pair distribution of self-assembled quantum dots. Both the volume distribution and pair distribution agreed with the scaling functions for two-dimensional submonolayer homoepitaxy model with critical cluster size i = 1, which excludes adatom detachment from clusters.
引用
收藏
页码：8234 / 8237
页数：4
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