Electric-Field Screening in Atomically Thin Layers of MoS2: the Role of Interlayer Coupling

被引:142
作者
Castellanos-Gomez, Andres [1 ]
Cappelluti, Emmanuele [2 ,3 ]
Roldan, Rafael [2 ]
Agrait, Nicolas [4 ,5 ]
Guinea, Francisco [2 ]
Rubio-Bollinger, Gabino [5 ]
机构
[1] Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, Netherlands
[2] CSIC, Inst Ciencia Mat Madrid, E-28049 Madrid, Spain
[3] CNR, ISC, I-00185 Rome, Italy
[4] Inst Madrileno Estudios Avanzados Nanociencia IMD, E-28049 Madrid, Spain
[5] Univ Autonoma Madrid, Dept Fis Mat Condensada, E-28049 Madrid, Spain
关键词
electric-field screening; MoS2; two-dimensional crystals; ThomasFermi theory; electrostatic force microscopy (EFM); MECHANICAL-PROPERTIES; BAND-STRUCTURES; MONOLAYER MOS2; GRAPHENE;
D O I
10.1002/adma.201203731
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The electrostatic screening in single and few-layer MoS2 sheets is studied. Electrostatic force microscopy is used to probe the electric field generated by charge impurities in the substrate and incompletely screened by MoS2 sheets. A non-linear Thomas-Fermi theory is employed to interpret the experimental results, demonstrating the important role of the interlayer coupling in the screening of MoS2.
引用
收藏
页码:899 / 903
页数:5
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