Electric-Field Screening in Atomically Thin Layers of MoS2: the Role of Interlayer Coupling

被引：142

作者：

Castellanos-Gomez, Andres ^{[1
]}

Cappelluti, Emmanuele ^{[2
,3
]}

Roldan, Rafael ^{[2
]}

Agrait, Nicolas ^{[4
,5
]}

Guinea, Francisco ^{[2
]}

Rubio-Bollinger, Gabino ^{[5
]}

机构：

[1] Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, Netherlands

[2] CSIC, Inst Ciencia Mat Madrid, E-28049 Madrid, Spain

[3] CNR, ISC, I-00185 Rome, Italy

[4] Inst Madrileno Estudios Avanzados Nanociencia IMD, E-28049 Madrid, Spain

[5] Univ Autonoma Madrid, Dept Fis Mat Condensada, E-28049 Madrid, Spain

来源：

ADVANCED MATERIALS | 2013年 / 25卷 / 06期

关键词：

electric-field screening; MoS2; two-dimensional crystals; ThomasFermi theory; electrostatic force microscopy (EFM); MECHANICAL-PROPERTIES; BAND-STRUCTURES; MONOLAYER MOS2; GRAPHENE;

D O I：

10.1002/adma.201203731

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The electrostatic screening in single and few-layer MoS2 sheets is studied. Electrostatic force microscopy is used to probe the electric field generated by charge impurities in the substrate and incompletely screened by MoS2 sheets. A non-linear Thomas-Fermi theory is employed to interpret the experimental results, demonstrating the important role of the interlayer coupling in the screening of MoS2.

引用

收藏

页码：899 / 903

页数：5

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