Helium effusion, diffusion and precipitation as a probe of microstructure in hydrogenated amorphous silicon

被引：7

作者：

Beyer, W ^{[1
]}

Zastrow, U ^{[1
]}

机构：

[1] Forschungszentrum Julich, Inst Photovoltaik, D-52425 Julich, Germany

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2002年 / 299卷

关键词：

D O I：

10.1016/S0022-3093(01)01004-3

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The effusion of implanted helium was studied for doped and undoped radio frequency plasma-deposited a-Si:H films as well as for Si:H films deposited by other techniques. The results suggest that the observed helium diffusion and precipitation effects give information on the material microstructure. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：254 / 258

页数：5

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