Hydrogen solubility and network stability in amorphous silicon

被引:67
作者
Acco, S
Williamson, DL
Stolk, PA
Saris, FW
vandenBoogaard, MJ
Sinke, WC
vanderWeg, WF
Roorda, S
机构
[1] FOM, INST ATOM & MOLEC PHYS, 1098 SJ AMSTERDAM, NETHERLANDS
[2] COLORADO SCH MINES, DEPT PHYS, GOLDEN, CO 80401 USA
[3] AT&T BELL LABS, MURRAY HILL, NJ 07974 USA
[4] UNIV MONTREAL, DEPT PHYS, GRP RECH PHYS & TECHNOL COUCHES MINCES, MONTREAL, PQ H3C 3J7, CANADA
[5] PHILIPS RES LABS, 5656 AA EINDHOVEN, NETHERLANDS
来源
PHYSICAL REVIEW B | 1996年 / 53卷 / 08期
关键词
D O I
10.1103/PhysRevB.53.4415
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In order to investigate the role of hydrogen in amorphous silicon (a-Si), hydrogenated amorphous silicon layers have been prepared by ion implantation at different H concentrations. Implanted samples have been characterized before and after annealing up to 550 degrees C by small-angle x-ray scattering, secondary-ion-mass spectrometry, and infrared spectroscopy. The study of the evolution of hydrogen concentration profiles and bonding configurations combined with the investigation of the atomic and nanoscale structures of the films indicate the solubility limit of hydrogen in a-Si to lie at 3-4 at. %. This limit is associated with the defect-related trap concentration in a-Si. If hydrogen is introduced in the matrix at a concentration well above its solubility, the alloy is intrinsically unstable to the formation of hydrogen complexes. Upon annealing at temperatures higher than 300 degrees C, the excess H (i.e., above the solubility) leaves the matrix, presumably forming H-2 molecules, which accumulate in nanoscale hydrogen complexes. Observations on nucleation and growth of these hydrogen complexes are discussed in light of H diffusion and solubility.
引用
收藏
页码:4415 / 4427
页数:13
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