ELECTRONIC-PROPERTIES OF A-SI-H AND A-SI-F FILMS PRODUCED BY ION-IMPLANTATION

被引：10

作者：

BOHRINGER, K ^{[1
]}

LIU, XH ^{[1
]}

KALBITZER, S ^{[1
]}

机构：

[1] SHANGHAI INST MET, SHANGHAI, PEOPLES R CHINA

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1983年 / 16卷 / 33期

关键词：

D O I：

10.1088/0022-3719/16/33/004

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：L187 / L192

页数：6

共 10 条

[1] PHOTOCONDUCTIVITY AND RECOMBINATION IN DOPED AMORPHOUS SILICON [J].

ANDERSON, DA ;

SPEAR, WE .

PHILOSOPHICAL MAGAZINE, 1977, 36 (03) :695-712

[2] HYDROGEN PROFILING IN GAS-PHASE DOPED AND ION-IMPLANTED AMORPHOUS-SILICON FILMS [J].

DEMOND, FJ ;

MULLER, G ;

DAMJANTSCHITSCH, H ;

MANNSPERGER, H ;

KALBITZER, S ;

LECOMBER, PG ;

SPEAR, WE .

JOURNAL DE PHYSIQUE, 1981, 42 (NC4) :779-782

[3] THE EFFECTS OF ION-IMPLANTATION ON THE ELECTRICAL-PROPERTIES OF AMORPHOUS-SILICON [J].

KALBITZER, S ;

MULLER, G ;

LECOMBER, PG ;

SPEAR, WE .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 41 (04) :439-456

[4]

KALBITZER S, 1983, P EC CONTRACTORS M, P163

[5] GROWTH-MORPHOLOGY AND DEFECTS IN PLASMA-DEPOSITED A-SI-H FILMS [J].

KNIGHTS, JC .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :159-170

[6] APPLICATIONS OF A-SI FIELD-EFFECT TRANSISTORS IN LIQUID-CRYSTAL DISPLAYS AND IN INTEGRATED-LOGIC CIRCUITS [J].

LECOMBER, PG ;

SNELL, AJ ;

MACKENZIE, KD ;

SPEAR, WE .

JOURNAL DE PHYSIQUE, 1981, 42 (NC4) :423-432

[7]

LIU XH, 1983, UNPUB

[8]

MULLER G, 1977, 7TH P INT C AM LIQ S, P347

[9]

REINELT M, 1983, 10TH P INT C AM LIQ

[10]

TSAI CC, 1977, 7TH P INT C AM LIQ S, P339

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