Unusually Strong Temperature Dependence of Graphene Electron Mobility

被引:6
作者
Akturk, Akin [1 ]
Goldsman, Neil [1 ]
机构
[1] Univ Maryland, Dept Elect & Comp Engn, College Pk, MD 20742 USA
来源
SISPAD: 2008 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES | 2008年
关键词
graphene mobility; temperature dependence; Bloch-Gruneisen temperature dependence; graphene mobility temperature dependence;
D O I
10.1109/SISPAD.2008.4648265
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report unusually strong temperature dependence of graphene electron mobility, obtained using full-band Monte Carlo (MC) simulations and experiment. The electron-phonon scattering limited intrinsic graphene electron mobility changes by as much as the fourth power of temperature, T-n ( 2 < n < 4), in the 200 K to 350 K range. This is in contradiction with the generally observed approximately linear T dependence around room temperature. This linear dependence arises due to the phonon equipartition approximation that gives rise to a linear temperature versus scattering rate relation. The highly nonlinear temperature dependence is reminiscent of transport in the Bloch-Gruneisen temperature range, where phonon energies assisting emissions and absorptions are less than or comparable to thermal energies. In addition, graphene has a conic dispersion relation around its K points or conduction band minima, setting it apart from other materials with parabolic energy-momentum curves around their conduction band minima, and consequently well-defined effective masses.
引用
收藏
页码:173 / 176
页数:4
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