Visible luminescence from nanocrystalline silicon films produced by plasma enhanced chemical vapor deposition

被引：52

作者：

Edelberg, E

Bergh, S

Naone, R

Hall, M

Aydil, ES

机构：

[1] UNIV CALIF SANTA BARBARA, DEPT CHEM ENGN, SANTA BARBARA, CA 93106 USA

[2] UNIV CALIF SANTA BARBARA, DEPT ELECT & COMP ENGN, SANTA BARBARA, CA 93106 USA

[3] UNIV CALIF SANTA BARBARA, DEPT MAT, SANTA BARBARA, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 10期

关键词：

D O I：

10.1063/1.116098

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin nanocrystalline silicon (nc-Si) films deposited by plasma enhanced chemical vapor deposition (PECVD) exhibited room-temperature photoluminescence in the visible range of the electromagnetic spectrum, High resolution transmission electron microscopy revealed that the films are made of Si crystals with dimensions 2-15 nm. The photoluminescence spectra of the nc-Si films were similar to the spectra observed from porous silicon produced by anodization and electrochemical dissolution of crystalline Si. This similarity suggests that the luminescence mechanism of nc-Si films is similar to the mechanism of light emission from porous silicon. The ability to manufacture luminescent Si films by methods which are compatible with the current Si based technology, such as PECVD, can provide new possibilities in the realization of optoelectronic devices. (C) 1996 American Institute of Physics.

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页码：1415 / 1417

页数：3

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