SOL thickness dependence of residual strain in SOI material

被引：12

作者：

Camassel, J

Planes, N

Falkovsky, L

Möller, H

Eickhoff, M

Krötz, G

机构：

[1] Univ Montpellier 2, Etud Semicond Grp, CNRS, F-34095 Montpellier 5, France

[2] Daimler Chrysler AG, Dept FT2M, D-81663 Munich, Germany

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 15期

关键词：

Etching - Ion beams - Oxidation - Semiconductor device structures - Silicon wafers - Strain;

D O I：

10.1049/el:19990868

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The structural properties of commercial SOI (silicon on insulator) wafers have been investigated against SOL (silicon over-layer) thickness. It is found that the upper part of a standard SOI material constantly exhibits a rather large amount of residual stress. It is shown that the repartitions of residual stresses depend on the final SOL thickness.

引用

页码：1284 / 1286

页数：3

共 9 条

[1] State of the art of 3C-SiC/silicon on insulators [J].