Overgrowth of InGaAs quantum dots formed by alternating molecular beam epitaxy

被引：22

作者：

Mirin, RP

Ibbetson, JP

Bowers, JE

Gossard, AC

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106

[2] UNIV CALIF SANTA BARBARA,QUEST,SANTA BARBARA,CA 93106

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 175卷

关键词：

quantum dots; indium gallium arsenide; MBE;

D O I：

10.1016/S0022-0248(96)00870-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Alternating molecular beam epitaxy is used to grow InGaAs quantum dots on (100) GaAs by utilizing the Stranski-Krastanow growth transition. A growth pause during the overgrowth with GaAs that is used to bury the quantum dots improves the photoluminescence intensity and line width compared to continuous growth of GaAs. The optimum thickness of GaAs to grow at the quantum dot growth temperature of 515 degrees C is 9.0 nm. Multiple layers of quantum dots have been grown, and transmission electron micrographs show vertical alignment between the layers. Intensity-dependent, room-temperature photoluminescence shows that excited-state luminescence can be reduced by using multiple layers of quantum dots, but growing too many layers leads to degradation of the photoluminescence intensity.

引用

收藏

页码：696 / 701

页数：6

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