Homo-epitaxial Si absorber layers grown by low-temperature ECRCVD

被引：28

作者：

Rau, B ^{[1
]}

Sieber, I ^{[1
]}

Selle, B ^{[1
]}

Brehme, S ^{[1
]}

Knipper, U ^{[1
]}

Gall, S ^{[1
]}

Fuhs, W ^{[1
]}

机构：

[1] Hahn Meitner Inst Berlin GmbH, D-12489 Berlin, Germany

来源：

THIN SOLID FILMS | 2004年 / 451卷

关键词：

silicon; low-temperature epitaxy; ECRCVD; electron backscattered diffraction;

D O I：

10.1016/j.tsf.2003.11.058

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We studied the homo-epitaxial growth of Si absorber layers at temperatures of 420-560 degreesC by electron-cyclotron resonance chemical vapour deposition. We deposited the Si films at rates of 15 nm min(-1) on (1 0 0)-, (3 1 1)-, (1 1 1)- and multicrystalline Si wafers. Both substrate temperature and orientation have a pronounced influence on the structural quality. On Si(1 0 0) substrates films grew epitaxially above 480 degreesC and are of excellent crystallographic quality up to thicknesses of 2.5 mum. On Si(3 1 1) the epitaxy breaks down rapidly by the formation of polycrystalline regions. On Si(1 1 1) the films are always fine polycrystalline. Using multicrystalline substrates the quality of the films is related to the orientation of the grains ranging from excellent epitaxy to pure fine polycrystalline growth. The electrical properties of the intentionally undoped films grown on Si(1 0 0) are discussed in relation to the crystal quality. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：644 / 648

页数：5

共 11 条

[1] Low-temperature Si epitaxy with high deposition rate using ion-assisted deposition [J].