Trap-limited migration of vacancy-type defects in 7.5 keV H--implanted Si

被引：7

作者：

Deenapanray, PNK ^{[1
]}

机构：

[1] Australian Natl Univ, Res Sch Phys Sci & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 09期

关键词：

D O I：

10.1063/1.1456952

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the generation and migration of defects in crystalline Si following their introduction at room temperature by low-energy hydrogen ions in a region confined to the near-surface region. The fluence dependence of free carrier compensation and creation of electrically active defects in the n-type samples was monitored by capacitance-voltage and deep level transient spectroscopy measurements, respectively. The defects were responsible for free carrier compensation to depths exceeding similar to1 mum beyond the top similar to0.25 mum region of samples where they were generated. We describe a close relationship between generation of the VO-H complex and the VP pair on the free carrier compensation. (C) 2002 American Institute of Physics.

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页码：1577 / 1579

页数：3

相关论文

共 23 条

[1] DEEP LEVELS INTRODUCED DURING ELECTRON-BEAM DEPOSITION OF METALS ON N-TYPE SILICON [J].

AURET, FD ;

MOONEY, PM .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) :988-993

[2] A deep level transient spectroscopy characterization of defects induced in epitaxially grown n-Si by low-energy He-ion bombardment [J].

Auret, FD ;

Deenapanray, PNK ;

Goodman, SA ;

Meyer, WE ;

Myburg, G .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (10) :5576-5578

[3] ELECTRONIC STATES CREATED IN P-SI SUBJECTED TO PLASMA-ETCHING - THE ROLE OF INHERENT IMPURITIES, POINT-DEFECTS, AND HYDROGEN [J].

AWADELKARIM, OO ;

GU, T ;

MIKULAN, PI ;

DITIZIO, RA ;

FONASH, SJ ;

REINHARDT, KA ;

CHAN, YD .

APPLIED PHYSICS LETTERS, 1993, 62 (09) :958-960

[4] MEASUREMENT OF DEFECT PROFILES IN REACTIVE ION ETCHED SILICON [J].

BENTON, JL ;

WEIR, BE ;

EAGLESHAM, DJ ;

GOTTSCHO, RA ;

MICHEL, J ;

KIMERLING, LC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (01) :540-543

[5] NEW CLASS OF RELATED OPTICAL DEFECTS IN SILICON IMPLANTED WITH THE NOBLE-GASES HE, NE, AR, KR, AND XE [J].

BURGER, N ;

THONKE, K ;

SAUER, R ;

PENSL, G .

PHYSICAL REVIEW LETTERS, 1984, 52 (18) :1645-1648

[6] POINT-DEFECT INJECTION INTO SILICON DUE TO LOW-TEMPERATURE SURFACE MODIFICATIONS [J].

CHRISTENSEN, C ;

PETERSEN, JW ;

LARSEN, AN .

APPLIED PHYSICS LETTERS, 1992, 61 (12) :1426-1428

[7] Electrical characterization and annealing behavior of defect introduced in Si during sputter etching in an Ar plasma [J].

Deenapanray, PNK ;

Auret, FD ;

Myburg, G .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (04) :1873-1880

[8] Deep level transient spectroscopy characterization of 1 keV He, Ne, and Ar ion bombarded, epitaxially grown n-Si [J].

Deenapanray, PNK ;

Auret, FD ;

Ridgway, MC ;

Goodman, SA ;

Myburg, G ;

Malherbe, JB .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (05) :2565-2570

[9] Characterization of optically active defects created by noble gas ion bombardment of silicon [J].

Deenapanray, PNK ;

Perret, NE ;

Brink, DJ ;

Auret, FD ;

Malherbe, JB .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (08) :4075-4080

[10]

DENAPANRAY PNK, IN PRESS PHYSICA B