NEW CLASS OF RELATED OPTICAL DEFECTS IN SILICON IMPLANTED WITH THE NOBLE-GASES HE, NE, AR, KR, AND XE

被引：55

作者：

BURGER, N ^{[1
]}

THONKE, K ^{[1
]}

SAUER, R ^{[1
]}

PENSL, G ^{[1
]}

机构：

[1] UNIV ERLANGEN NURNBERG,INST ANGEW PHYS,D-8520 ERLANGEN,FED REP GER

来源：

PHYSICAL REVIEW LETTERS | 1984年 / 52卷 / 18期

关键词：

D O I：

10.1103/PhysRevLett.52.1645

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1645 / 1648

页数：4

共 16 条

[1] COMPLEX ISOTOPE SPLITTING OF THE NO-PHONON LINES ASSOCIATED WITH EXCITON DECAY AT A 4-LITHIUM-ATOM ISOELECTRONIC CENTER IN SILICON
CANHAM, L
DAVIES, G
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BLACKMORE, GW
[J]. PHYSICA B & C, 1983, 117 (MAR): : 119 - 121
[2] ISOTOPE EFFECTS ON THE 969 MEV VIBRONIC BAND IN SILICON
DAVIES, G
DOCARMO, MC
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (23): : L687 - L691
[3] KAPLYANSKII AA, 1964, OPT SPEKTROSK, V16, P329
[4] RECOMBINATION LUMINESCENCE FROM ION-IMPLANTED SILICON
KIRKPATRICK, CG
NOONAN, JR
STREETMAN, BG
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 30 (02): : 97 - 106
[5] EPR STUDIES IN NEUTRON-IRRADIATED SILICON - NEGATIVE CHARGE STATE OF A NONPLANAR 5-VACANCY CLUSTER (V5-)
LEE, YH
CORBETT, JW
[J]. PHYSICAL REVIEW B, 1973, 8 (06): : 2810 - 2826
[6] EPR STUDY OF DEFECTS IN NEUTRON-IRRADIATED SILICON - QUENCHED-IN ALIGNMENT UNDER (110)-UNIAXIAL STRESS
LEE, YH
CORBETT, JW
[J]. PHYSICAL REVIEW B, 1974, 9 (10): : 4351 - 4361
[7] SYMMETRY AND NATURE OF THE 1.0186 EV LUMINESCENCE CENTER IN NEUTRON-IRRADIATED SILICON
MINAEV, NS
MUDRII, AV
TKACHEV, VD
[J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1981, 108 (02): : K89 - K94
[8] MUDRYI AV, 1975, SOV PHYS SEMICOND+, V8, P875
[9] ORIGIN OF THE 0.97 EV LUMINESCENCE IN IRRADIATED SILICON
ODONNELL, KP
LEE, KM
WATKINS, GD
[J]. PHYSICA B & C, 1983, 116 (1-3): : 258 - 263
[10] PHOTO-LUMINESCENCE CHARACTERIZATION OF DEEP DEFECTS IN SILICON
SAUER, R
WEBER, J
[J]. PHYSICA B & C, 1983, 116 (1-3): : 195 - 209

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