SYMMETRY AND NATURE OF THE 1.0186 EV LUMINESCENCE CENTER IN NEUTRON-IRRADIATED SILICON

被引:25
作者
MINAEV, NS
MUDRII, AV
TKACHEV, VD
机构
来源
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 1981年 / 108卷 / 02期
关键词
D O I
10.1002/pssb.2221080251
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:K89 / K94
页数:6
相关论文
共 11 条
  • [1] INFLUENCE OF UNIAXIAL STRESS ON INDIRECT ABSORPTION EDGE IN SILICON AND GERMANIUM
    BALSLEV, I
    [J]. PHYSICAL REVIEW, 1966, 143 (02): : 636 - &
  • [2] CORBETT JW, 1973, IOP C SER, V16, P1
  • [3] TEMPERATURE, STRESS, AND ANNEALING EFFECTS ON LUMINESCENCE FROM ELECTRON-IRRADIATED SILICON
    JONES, CE
    JOHNSON, ES
    COMPTON, WD
    NOONAN, JR
    STREETMA.BG
    [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (12) : 5402 - 5410
  • [4] Kaplyanskii A., 1964, Opt. Spectrosc, V16, P329
  • [5] RECOMBINATION LUMINESCENCE FROM ION-IMPLANTED SILICON
    KIRKPATRICK, CG
    NOONAN, JR
    STREETMAN, BG
    [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 30 (02): : 97 - 106
  • [6] EPR STUDIES IN NEUTRON-IRRADIATED SILICON - NEGATIVE CHARGE STATE OF A NONPLANAR 5-VACANCY CLUSTER (V5-)
    LEE, YH
    CORBETT, JW
    [J]. PHYSICAL REVIEW B, 1973, 8 (06): : 2810 - 2826
  • [7] EPR STUDY OF DEFECTS IN NEUTRON-IRRADIATED SILICON - QUENCHED-IN ALIGNMENT UNDER (110)-UNIAXIAL STRESS
    LEE, YH
    CORBETT, JW
    [J]. PHYSICAL REVIEW B, 1974, 9 (10): : 4351 - 4361
  • [8] Tkachev VD, 1977, I PHYS C SER, V31, P231
  • [9] TKACHEV VD, 1978, INT C DEFECTS RAD EF, pG3
  • [10] TKACHEV VD, 1978, P INT C ION BEAM MOD, P1143