Deep level transient spectroscopy characterization of 1 keV He, Ne, and Ar ion bombarded, epitaxially grown n-Si

被引：7

作者：

Deenapanray, PNK ^{[1
]}

Auret, FD

Ridgway, MC

Goodman, SA

Myburg, G

Malherbe, JB

机构：

[1] Univ Pretoria, Dept Phys, ZA-0002 Pretoria, South Africa

[2] Australian Natl Univ, Dept Elect Mat Engn, Canberra, ACT 0200, Australia

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 84卷 / 05期

关键词：

D O I：

10.1063/1.368439

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Deep level transient spectroscopy has been used to investigate the electronic properties and isochronal annealing behavior of defects formed in epitaxially grown n-Si by 1 keV He-, Ne-, and Ar-ion bombardment. Similarities between peaks found for the different bombardment gases suggested that they were from structurally related defects. Two families of such related defects were observed in the unannealed samples. Annealing data revealed additional peaks and enabled another defect family formed above 400 degrees C to be identified. The energy levels and capture cross sections have been determined for three new families of related defects. The defect families were presumed to be either complex vacancy clusters or hydrogen related. (C) 1998 American Institute of Physics. [S0021-8979(98)06817-0].

引用

页码：2565 / 2570

页数：6

共 29 条

[1]

ABDULLIN KA, 1992, MATER RES SOC SYMP P, V262, P1109, DOI 10.1557/PROC-262-1109

[2] A deep level transient spectroscopy characterization of defects induced in epitaxially grown n-Si by low-energy He-ion bombardment [J].

Auret, FD ;

Deenapanray, PNK ;

Goodman, SA ;

Meyer, WE ;

Myburg, G .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (10) :5576-5578

[3] ELECTRONIC STATES CREATED IN P-SI SUBJECTED TO PLASMA-ETCHING - THE ROLE OF INHERENT IMPURITIES, POINT-DEFECTS, AND HYDROGEN [J].

AWADELKARIM, OO ;

GU, T ;

MIKULAN, PI ;

DITIZIO, RA ;

FONASH, SJ ;

REINHARDT, KA ;

CHAN, YD .

APPLIED PHYSICS LETTERS, 1993, 62 (09) :958-960

[4] Low-energy Ar ion-induced and chlorine ion etching of silicon [J].

Balooch, M ;

Moalem, M ;

Wang, WE ;

Hamza, AV .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1996, 14 (01) :229-233

[5] DEFECT PRODUCTION AND LIFETIME CONTROL IN ELECTRON AND GAMMA-IRRADIATED SILICON [J].

BROTHERTON, SD ;

BRADLEY, P .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) :5720-5732

[6] NEW CLASS OF RELATED OPTICAL DEFECTS IN SILICON IMPLANTED WITH THE NOBLE-GASES HE, NE, AR, KR, AND XE [J].

BURGER, N ;

THONKE, K ;

SAUER, R ;

PENSL, G .

PHYSICAL REVIEW LETTERS, 1984, 52 (18) :1645-1648

[7] PHOTOLUMINESCENCE OF LOW-ENERGY ION BOMBARDED SILICON [J].

DAVIS, RJ ;

HABERMEIER, HU ;

WEBER, J .

APPLIED PHYSICS LETTERS, 1985, 47 (12) :1295-1297

[8] RECOMBINATION-ENHANCED SUPPRESSION OF DEEP TRAP ACCUMULATION IN SILICON DURING HE+ ION-IMPLANTATION [J].

EROKHIN, YN ;

RAVI, J ;

WHITE, CW ;

ROZGONYI, GA .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 96 (1-2) :223-226

[9] Noble-gas-related defects in Si and the origin of the 1018 meV photoluminescence line [J].

Estreicher, SK ;

Weber, J ;

DerecskeiKovacs, A ;

Marynick, DS .

PHYSICAL REVIEW B, 1997, 55 (08) :5037-5044

[10] The ring-hexavacany in silicon: A stable and inactive defect [J].

Estreicher, SK ;

Hastings, JL ;

Fedders, PA .

APPLIED PHYSICS LETTERS, 1997, 70 (04) :432-434

← 1 2 3 →