RECOMBINATION-ENHANCED SUPPRESSION OF DEEP TRAP ACCUMULATION IN SILICON DURING HE+ ION-IMPLANTATION

被引：5

作者：

EROKHIN, YN ^{[1
]}

RAVI, J ^{[1
]}

WHITE, CW ^{[1
]}

ROZGONYI, GA ^{[1
]}

机构：

[1] OAK RIDGE NATL LAB,OAK RIDGE,TN 37831

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1995年 / 96卷 / 1-2期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0168-583X(94)00487-0

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The influence of in situ forward bias on the accumulation of defect complexes in p(+)-n diodes during 75 keV He+ ion implantation has been investigated. Deep level transient spectrometry was used to characterize the concentration, spatial distribution and energy levels of implantation induced deep traps. It was found that in situ forward bias with a current density of 2 A/cm(2) causes more than an order of magnitude suppression of deep trap accumulation. This is attributed to recombination enhanced migration of mobile constituents prior to defect complex formation. A new major electron deep trap located at E(c) - 0.55 eV [1] was investigated. Its annealing kinetics, charge carrier capture cross section, and spatial distribution with respect to previously known deep traps are presented.

引用

页码：223 / 226

页数：4

共 16 条

[1] CHARACTERIZATION OF DEEP LEVELS INTRODUCED BY ALPHA-RADIATION IN N-TYPE SILICON [J].