DEEP LEVEL TRANSIENT SPECTROSCOPY ANALYSIS OF FAST ION TRACKS IN SILICON

Deep level transient spectroscopy measurements of electron traps in MeV proton- and alpha-irradiated n-type silicon have been performed. Six deep levels are found in proton-irradiated samples, while only three appear after alpha irradiation. The influence of the irradiation dose on the defect production is investigated together with the depth concentration profiles. The profiles scale with the nuclear energy deposition, but in the case of the doubly negative charged state of the divacancy at EC -0.24 eV, the peak concentration at the end of the track is less pronounced relative to the tail region towards the surface. It is proposed that the singly negative charged state at E C -0.42 is more probable in a highly distorted lattice and it is shown that the formation of the singly negative charged state of the divacancy dominates the defect production for higher doses.