LOCALIZED LIFETIME CONTROL IN INSULATED-GATE TRANSISTORS BY PROTON IMPLANTATION

被引：50

作者：

MOGROCAMPERO, A ^{[1
]}

LOVE, RP ^{[1
]}

CHANG, MF ^{[1
]}

DYER, R ^{[1
]}

机构：

[1] GE,DEPT POWER ELECTR SEMICOND,SYRACUSE,NY 13221

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 11期

关键词：

D O I：

10.1109/T-ED.1986.22726

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1667 / 1671

页数：5

共 16 条

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[8] SHORTER TURN-OFF TIMES IN INSULATED GATE TRANSISTORS BY PROTON IMPLANTATION [J].

MOGROCAMPERO, A ;

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[9] CARRIER LIFETIME REDUCTION IN SILICON BY PROTON IMPLANTATION THROUGH MOS STRUCTURES [J].

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[10]

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