CARRIER LIFETIME REDUCTION IN SILICON BY PROTON IMPLANTATION THROUGH MOS STRUCTURES

被引：10

作者：

MOGROCAMPERO, A

LOVE, RP

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1984年 / 131卷 / 11期

关键词：

D O I：

10.1149/1.2115382

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2679 / 2683

页数：5

共 16 条

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[7] CARRIER LIFETIME REDUCTION BY ARGON IMPLANTATION INTO SILICON [J].

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[8]

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