Deep level transient spectroscopy characterization of 1 keV He, Ne, and Ar ion bombarded, epitaxially grown n-Si

被引：7

作者：

Deenapanray, PNK ^{[1
]}

Auret, FD

Ridgway, MC

Goodman, SA

Myburg, G

Malherbe, JB

机构：

[1] Univ Pretoria, Dept Phys, ZA-0002 Pretoria, South Africa

[2] Australian Natl Univ, Dept Elect Mat Engn, Canberra, ACT 0200, Australia

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 84卷 / 05期

关键词：

D O I：

10.1063/1.368439

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Deep level transient spectroscopy has been used to investigate the electronic properties and isochronal annealing behavior of defects formed in epitaxially grown n-Si by 1 keV He-, Ne-, and Ar-ion bombardment. Similarities between peaks found for the different bombardment gases suggested that they were from structurally related defects. Two families of such related defects were observed in the unannealed samples. Annealing data revealed additional peaks and enabled another defect family formed above 400 degrees C to be identified. The energy levels and capture cross sections have been determined for three new families of related defects. The defect families were presumed to be either complex vacancy clusters or hydrogen related. (C) 1998 American Institute of Physics. [S0021-8979(98)06817-0].

引用

页码：2565 / 2570

页数：6

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