PHOTOLUMINESCENCE OF LOW-ENERGY ION BOMBARDED SILICON

被引：21

作者：

DAVIS, RJ ^{[1
]}

HABERMEIER, HU ^{[1
]}

WEBER, J ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 12期

关键词：

D O I：

10.1063/1.96310

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1295 / 1297

页数：3

共 11 条

[1] NEW CLASS OF RELATED OPTICAL DEFECTS IN SILICON IMPLANTED WITH THE NOBLE-GASES HE, NE, AR, KR, AND XE
BURGER, N
THONKE, K
SAUER, R
PENSL, G
[J]. PHYSICAL REVIEW LETTERS, 1984, 52 (18) : 1645 - 1648
[2] DEPENDENCE OF LOW-ENERGY ION-BEAM EXPOSURE EFFECTS IN SILICON ON ION SPECIES, EXPOSURE HISTORY, AND MATERIAL PROPERTIES
DAVIS, RJ
CLIMENT, A
FONASH, SJ
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR) : 831 - 835
[3] DAVIS RJ, 1984, THIN FILMS INTERFACE, V25, P607
[4] HABERMEIER HU, 1983, VIDE COUCHES MINCES, V218, P259
[5] RECOMBINATION LUMINESCENCE FROM ION-IMPLANTED SILICON
KIRKPATRICK, CG
NOONAN, JR
STREETMAN, BG
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 30 (02): : 97 - 106
[6] EPR STUDIES IN NEUTRON-IRRADIATED SILICON - NEGATIVE CHARGE STATE OF A NONPLANAR 5-VACANCY CLUSTER (V5-)
LEE, YH
CORBETT, JW
[J]. PHYSICAL REVIEW B, 1973, 8 (06): : 2810 - 2826
[7] EPR STUDY OF DEFECTS IN NEUTRON-IRRADIATED SILICON - QUENCHED-IN ALIGNMENT UNDER (110)-UNIAXIAL STRESS
LEE, YH
CORBETT, JW
[J]. PHYSICAL REVIEW B, 1974, 9 (10): : 4351 - 4361
[8] SYMMETRY AND NATURE OF THE 1.0186 EV LUMINESCENCE CENTER IN NEUTRON-IRRADIATED SILICON
MINAEV, NS
MUDRII, AV
TKACHEV, VD
[J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1981, 108 (02): : K89 - K94
[9] EFFECT OF BEAM ENERGY AND ANNEAL HISTORY ON TRIVALENTLY BONDED SILICON DEFECT CENTERS INDUCED BY ION-BEAM ETCHING
SINGH, R
FONASH, SJ
CAPLAN, PJ
POINDEXTER, EH
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (05) : 502 - 504
[10] NOBLE-GAS ATOMS AS CHEMICAL-IMPURITIES IN SILICON
TKACHEV, VD
MUDRYI, AV
MINAEV, NS
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 81 (01): : 313 - 321

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