EFFECT OF BEAM ENERGY AND ANNEAL HISTORY ON TRIVALENTLY BONDED SILICON DEFECT CENTERS INDUCED BY ION-BEAM ETCHING

被引：35

作者：

SINGH, R ^{[1
]}

FONASH, SJ ^{[1
]}

CAPLAN, PJ ^{[1
]}

POINDEXTER, EH ^{[1
]}

机构：

[1] USA,ELECTR TECHNOL & DEVICES LAB,FT MONMOUTH,NJ 07703

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 05期

关键词：

D O I：

10.1063/1.94367

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：502 / 504

页数：3

共 12 条

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