DEPENDENCE OF LOW-ENERGY ION-BEAM EXPOSURE EFFECTS IN SILICON ON ION SPECIES, EXPOSURE HISTORY, AND MATERIAL PROPERTIES

被引：10

作者：

DAVIS, RJ

CLIMENT, A

FONASH, SJ

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1985年 / 7-8卷 / MAR期

关键词：

D O I：

10.1016/0168-583X(85)90478-1

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：831 / 835

页数：5

共 23 条

[1] SILICON SCHOTTKY-BARRIER MODIFICATION BY ION-IMPLANTATION DAMAGE [J].

ASHOK, S ;

MOGROCAMPERO, A .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (02) :48-49

[2]

AURET FD, 1983, THIN SOLID FILMS, V44, P339

[3] DEPENDENCE OF RESIDUAL DAMAGE ON TEMPERATURE DURING AR+ SPUTTER CLEANING OF SILICON [J].

BEAN, JC ;

BECKER, GE ;

PETROFF, PM ;

SEIDEL, TE .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) :907-913

[4]

CLIMENT A, 1983, MATERIALS RES SOC S

[5]

DAVIS RJ, 1983, MATERIALS RES SOC S

[6] BASIC CHEMISTRY AND MECHANISMS OF PLASMA-ETCHING [J].

FLAMM, DL ;

DONNELLY, VM ;

IBBOTSON, DE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (01) :23-30

[7]

FONASH SJ, 1984, PHYSICS VLSI

[8] TYPE CONVERSION OF INSB FROM P TO N BY ION-BOMBARDMENT AND LASER IRRADIATION [J].

FUJISAWA, I .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (11) :2137-2141

[9] EFFECTS OF LOW-ENERGY GAS DISCHARGES ON EVAPORATED METAL-SEMICONDUCTOR CONTACTS [J].

HARTIG, PA ;

NOYCE, RN .

JOURNAL OF APPLIED PHYSICS, 1956, 27 (08) :843-847

[10]

JASTRZEBSKI L, 1982, IEEE SOLID STATE CIR, V17, P105

← 1 2 3 →