Computational investigation of the chemical modification of polystyrene through fluorocarbon and hydrocarbon ion beam deposition

被引:12
作者
Hsu, WD [1 ]
Jang, I [1 ]
Sinnott, SB [1 ]
机构
[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
关键词
D O I
10.1021/cm052557p
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Classical molecular dynamics (MD) simulations are used to study the effect of continuous hydrocarbon (HC) and fluorocarbon (FC) ion beam deposition on a polystyrene (PS) surface. Plasma processing is widely used to chemically modify surfaces and deposit thin films, and it is well-accepted that polyatomic ions and neutrals within low-energy plasmas have a significant effect on the surface chemistry. Here a comparison is made of the manner in which polyatomic FC ions and similarly structured HC ions react with PS and produce new structures. Specifically, the deposition of beams of C3H5+, CH3+, C3F5+, and CF3+ on PS surfaces at experimental fluences is considered. The simulations predict that the backbone chains are modified significantly more than the phenyl groups and that larger ions with lower velocities and larger collision cross sections modify the substrate to a shallower depth than smaller ions with higher velocities, even though all their incident kinetic energies are the same. Additionally, HC ions dissociate more readily than FC ions during deposition. Consequently, smaller HC ions are predicted to chemically modify the polystyrene to a greater extent than larger HC ions or FC ions.
引用
收藏
页码:914 / 921
页数:8
相关论文
共 37 条
[1]   Molecular dynamics simulations of Si etching by energetic CF3+ [J].
Abrams, CF ;
Graves, DB .
JOURNAL OF APPLIED PHYSICS, 1999, 86 (11) :5938-5948
[2]   Nanostructure of fluorocarbon films deposited on polystyrene from hyperthermal C3F5+ ions [J].
Akin, FA ;
Jang, I ;
Schlossman, ML ;
Sinnott, SB ;
Zajac, G ;
Fuoco, ER ;
Wijesundara, MBJ ;
Li, M ;
Tikhonov, A ;
Pingali, SV ;
Wroble, AT ;
Hanley, L .
JOURNAL OF PHYSICAL CHEMISTRY B, 2004, 108 (28) :9656-9664
[3]  
ALLEN MP, 1986, COMPUTER SIMULATION
[4]   A second-generation reactive empirical bond order (REBO) potential energy expression for hydrocarbons [J].
Brenner, DW ;
Shenderova, OA ;
Harrison, JA ;
Stuart, SJ ;
Ni, B ;
Sinnott, SB .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2002, 14 (04) :783-802
[5]   Fluorine incorporation into amorphous hydrogenated carbon films deposited by plasma-enhanced chemical vapor deposition: structural modifications investigated by X-ray photoelectron spectrometry and Raman spectroscopy [J].
da Costa, MEHM ;
Freire, FL ;
Jacobsohn, LG ;
Franceschini, D ;
Mariotto, G ;
Baumvol, IRJ .
DIAMOND AND RELATED MATERIALS, 2001, 10 (3-7) :910-914
[6]   Synthesis of polytetrafluoroethylene-like films by a novel plasma enhanced chemical vapor deposition employing solid material evaporation technique [J].
Fujita, K ;
Ito, M ;
Hori, M ;
Goto, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (2A) :650-656
[7]   Diamond-like carbon: state of the art [J].
Grill, A .
DIAMOND AND RELATED MATERIALS, 1999, 8 (2-5) :428-434
[8]   Mechanism of silicon etching in the presence of CF2, F, and Ar+ [J].
Humbird, D ;
Graves, DB .
JOURNAL OF APPLIED PHYSICS, 2004, 96 (05) :2466-2471
[9]   Atomistic simulations of spontaneous etching of silicon by fluorine and chlorine [J].
Humbird, D ;
Graves, DB .
JOURNAL OF APPLIED PHYSICS, 2004, 96 (01) :791-798
[10]   Fluorocarbon plasma etching of silicon: Factors controlling etch rate [J].
Humbird, D ;
Graves, DB .
JOURNAL OF APPLIED PHYSICS, 2004, 96 (01) :65-70