Nanostructure of fluorocarbon films deposited on polystyrene from hyperthermal C3F5+ ions

被引:19
作者
Akin, FA
Jang, I
Schlossman, ML [1 ]
Sinnott, SB
Zajac, G
Fuoco, ER
Wijesundara, MBJ
Li, M
Tikhonov, A
Pingali, SV
Wroble, AT
Hanley, L
机构
[1] Univ Illinois, Dept Chem, Chicago, IL 60607 USA
[2] Univ Illinois, Dept Phys, Chicago, IL 60607 USA
[3] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
[4] BP Chem Res Ctr, Naperville, IL 60566 USA
关键词
D O I
10.1021/jp036129n
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Fluorocarbon films were grown on polystyrene in vacuum from 25- to 100-eV mass-selected C3F5+ ion beams. The films were analyzed by X-ray photoelectron spectroscopy, atomic force microscopy, and X-ray reflectivity after exposure to the atmosphere for 4-8 weeks. The X-ray reflectivity indicates films that range from similar to30 to 60-Angstrom thick. The thinner films form at lower ion energies, where the ion penetration depth and efficiency of film formation are lowest. X-ray reflectivity estimates air-fluorocarbon film roughness values of similar to6 Angstrom for 25- and 50-eV films but similar to20 Angstrom for the 100-eV films. The fluorocarbon-polystyrene-buried interface displays similar roughness and trends with ion energy. The AFM roughness trends are similar, but the absolute AFM roughnesses are only similar to(1)/(4) of the X-ray reflectivity values. This discrepancy is attributed to tip effects and the method of determining roughness by AFM. The AFM images and power spectral densities of the 100-eV films displayed quasi-periodic cones spaced 300-700 A apart. Such features are either absent or of much lower amplitude in the 25- and 50-eV films. Classical molecular dynamics simulations of C3F5+ deposition on polystyrene at energies of 50 and 100 eV/ion reveal that etching at the higher energy is largely responsible for the dissimilar film structures obtained experimentally. These results demonstrate that deposition of the fluorocarbon polyatomic ion C3F5+ allows control of film nanostructure at the surface and buried interface.
引用
收藏
页码:9656 / 9664
页数:9
相关论文
共 24 条
[1]  
Allen M. P., 2017, Computer Simulation of Liquids, VSecond, DOI [10.1093/oso/9780198803195.001.0001, DOI 10.1093/OSO/9780198803195.001.0001]
[2]   A second-generation reactive empirical bond order (REBO) potential energy expression for hydrocarbons [J].
Brenner, DW ;
Shenderova, OA ;
Harrison, JA ;
Stuart, SJ ;
Ni, B ;
Sinnott, SB .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2002, 14 (04) :783-802
[3]   Surface modification and patterning using low-energy ion beams: Si-O bond formation at the vacuum/adsorbate interface [J].
Evans, C ;
Wade, N ;
Pepi, F ;
Strossman, G ;
Schuerlein, T ;
Cooks, RG .
ANALYTICAL CHEMISTRY, 2002, 74 (02) :317-323
[4]   Large fluorocarbon ions can contribute to film growth during plasma etching of silicon [J].
Fuoco, ER ;
Hanley, L .
JOURNAL OF APPLIED PHYSICS, 2002, 92 (01) :37-44
[5]   Modeling of surface processes as exemplified by hydrocarbon reactions [J].
Garrison, BJ ;
Kodali, PBS ;
Srivastava, D .
CHEMICAL REVIEWS, 1996, 96 (04) :1327-1341
[6]   Controlling the nanoscale morphology of organic films deposited by polyatomic ions [J].
Hanley, L ;
Choi, YS ;
Fuoco, ER ;
Akin, FA ;
Wijesundara, MBJ ;
Li, M ;
Tikhonov, A ;
Schlossman, M .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2003, 203 :116-123
[7]   The growth and modification of materials via ion-surface processing [J].
Hanley, L ;
Sinnott, SB .
SURFACE SCIENCE, 2002, 500 (1-3) :500-522
[8]   Study of C3H5+ ion deposition on polystyrene and polyethylene surfaces using molecular dynamics simulations [J].
Jang, I ;
Phillips, R ;
Sinnott, SB .
JOURNAL OF APPLIED PHYSICS, 2002, 92 (06) :3363-3367
[9]   Study of angular influence of C3H5+ ion deposition on polystyrene surfaces using molecular dynamics simulations [J].
Jang, I ;
Ni, B ;
Sinnott, SB .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2002, 20 (02) :564-568
[10]  
JANG I, 2004, UNPUB J PHYS CHEM B