The analysis of bending stress and mechanical property of ultralarge diameter silicon wafers at high temperatures

被引：39

作者：

Fukuda, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 07期

关键词：

silicon; wafer; bending stress; elastic theory; dislocation; slippage; releasing stress;

D O I：

10.1143/JJAP.35.3799

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper, we investigate the bending stress during thermal annealing of 300 mm diameter wafers on various support structures. We calculate the bending stress generated in the wafers using linear elastic theory and investigate the relationship between the stress and the mechanical strength of silicon crystals. We discuss the temperature range and support structure which can avoid crystallographic slippage in these ultra-large diameter wafers.

引用

页码：3799 / 3806

页数：8

共 27 条

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