InP-collector double-heterojunction bipolar transistors by valved phosphorus cracker

被引：7

作者：

Chin, TP ^{[1
]}

Gutierrez-Aitken, AL ^{[1
]}

Cowles, J ^{[1
]}

Kaneshiro, EN ^{[1
]}

Han, AC ^{[1
]}

Block, TR ^{[1
]}

Oki, AK ^{[1
]}

Streit, DC ^{[1
]}

机构：

[1] TRW Co Inc, Elect Syst & Technol Div, Redondo Beach, CA 90278 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1999年 / 17卷 / 03期

关键词：

D O I：

10.1116/1.590708

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the growth and device characterization of InAlAs/InGaAs/InP double-heterojunction bipolar transistors in a solid source molecular beam epitaxy system with a valved-phosphorus cracker. Linearly graded InGaAlAs base-collector and emitter-base junctions were used. Photoreflectance characterization shows excellent growth reproducibility. The dc current-voltage characteristics of a 1.5x10 mu m(2) device indicate high breakdown voltage, low offset voltage, and good linearity. Breakdown voltage of an InP-collector device with compositionally graded base-collector junction is 19 V compared to 11 V for an InGaAs-collector device. By comparison, a chirped superlattice base-collector junction shows significant current oscillations due to the carrier tunneling effect. High-frequency performance was similar to previously reported InGaAs-collector devices; unity current-gain frequency and unity maximum-available power gain frequency are 75 and 140 GHz, respectively. (C) 1999 American Vacuum Society. [S0734-211X(99)01403-1].

引用

页码：1136 / 1138

页数：3

共 17 条

[1]

ADACHI S, 1992, PHYSICAL PROPERTIES, P98

[2] All solid source molecular beam epitaxy growth of GaxIn1-xAsyP1-y/InP lasers using phosphorus and arsenic valved cracking cells [J].

Baillargeon, JN ;

Cheng, KY ;

Cho, AY ;

Chu, SNG .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (03) :2244-2247

[3] Molecular beam epitaxy growth and characterization of InGaAlAs-collector heterojunction bipolar transistors with 140 GHz: F-max and 20 V breakdown [J].

Block, TR ;

Wojtowicz, M ;

Cowles, J ;

Tran, L ;

Oki, AK ;

Streit, DC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (03) :2221-2224

[4] InP/InGaAs single heterojunction bipolar transistors grown by solid-source molecular beam epitaxy using a phosphorus valved cracker [J].

Chen, WL ;

Chin, TP ;

Woodall, JM ;

Haddad, GI .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (04) :2739-2741

[5] InGaP/GaAs/InGaP double-heterojunction bipolar transistors grown by solid-source molecular-beam epitaxy with a valved phosphorus cracker [J].

Chin, TP ;

Chang, JCP ;

Woodall, JM ;

Chen, WL ;

Haddad, GI .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (03) :2225-2228

[6] INP/INGAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS INCORPORATING CARBON-DOPED BASES AND SUPERLATTICE GRADED BASE-COLLECTOR JUNCTIONS [J].

GEE, RC ;

LIN, CL ;

FARLEY, CW ;

SEABURY, CW ;

HIGGINS, JA ;

KIRCHNER, PD ;

WOODALL, JM ;

ASBECK, PM .

ELECTRONICS LETTERS, 1993, 29 (10) :850-851

[7]

Hafizi M., 1993, International Electron Devices Meeting 1993. Technical Digest (Cat. No.93CH3361-3), P791, DOI 10.1109/IEDM.1993.347195

[8] Solid source molecular beam epitaxial growth of In0.5Ga0.5P pseudomorphic high electron mobility transistor structures [J].

Hoke, WE ;

Lemonias, PJ ;

Beaudoin, RM ;

Torabi, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (03) :1408-1412

[9]

HUANG CH, 1993, C P 5 INT C IND PHOS, P439

[10] AlInAs/GaInAs/InP double heterojunction bipolar transistor with a novel base-collector design for power applications [J].

Nguyen, C ;

Liu, TY ;

Chen, M ;

Sun, HC ;

Rensch, D .

IEEE ELECTRON DEVICE LETTERS, 1996, 17 (03) :133-135

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