InP/InGaAs single heterojunction bipolar transistors grown by solid-source molecular beam epitaxy using a phosphorus valved cracker

In this work, InP/InGaAs single heterojunction bipolar transistors (SHBTs) with excellent performance were grown by solid-source molecular beam epitaxy using a phosphorus valved cracker. The maximum de and differential current gain are similar to 27 and 32 with breakdown voltages V(ceo)similar to 6 V and V(cbo)similar to 10 V for the SHBT with a 5000 Angstrom InGaAs collector layer doped at 4x10(16) cm(-3). The ideality factors for Ib and Ic are similar to 1.12 and 1.07 and the transistors also show very uniform current gain down to 10(-10) A range. For high frequency performance, the maximum f(T) and f(max) are around 80 and 125 GHz for the SHBT with an emitter area of 32 mu m(2). (C) 1996 American Vacuum Society.