INGAAS/INP HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY ALL-SOLID SOURCE MOLECULAR-BEAM EPITAXY

被引：8

作者：

WILLEN, B ^{[1
]}

ASONEN, H ^{[1
]}

TOIVONEN, M ^{[1
]}

机构：

[1] TAMPERE UNIV TECHNOL,DEPT PHYS,SF-33101 TAMPERE,FINLAND

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 17期

关键词：

HETEROJUNCTION BIPOLAR TRANSISTORS; MOLECULAR BEAM EPITAXIAL GROWTH;

D O I：

10.1049/el:19951015

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

State-of-the-art InGaAs/lnP heterojunction bipolar transistors were grown by all-solid source molecular beam epitaxy. Fabricated transistors showed cutoff frequencies of >100 GHz with an emitter area of 1.5 x 5 mu M(2). Together with recent studies, these results demonstrate that the valved cracker technique is a very competitive nontoxic growth method.

引用

页码：1514 / 1515

页数：2

共 6 条

[1] EVALUATION OF THE PERFORMANCE AND OPERATING CHARACTERISTICS OF A SOLID PHOSPHORUS SOURCE VALVED CRACKING CELL FOR MOLECULAR-BEAM EPITAXY GROWTH OF III-V COMPOUNDS [J].

BAILLARGEON, JN ;

CHO, AY ;

FISCHER, RJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (01) :64-68

[2] SOLID SOURCE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GA0.5IN0.5P USING A VALVED, 3-ZONE PHOSPHORUS SOURCE [J].

HOKE, WE ;

WEIR, DG ;

LEMONIAS, PJ ;

HENDRIKS, HT ;

JACKSON, GS ;

COLOMBO, P .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (02) :733-735

[3] HIGH-PERFORMANCE ZN-DOPED-BASE INP/INGAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY [J].

KURISHIMA, K ;

NAKAJIMA, H ;

YAMAHATA, S ;

KOBAYASHI, T ;

MATSUOKA, Y .

APPLIED PHYSICS LETTERS, 1994, 64 (09) :1111-1113

[4] INP/INGAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN ON (100) SI BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

MAKIMOTO, T ;

KURISHIMA, K ;

KOBAYASHI, T ;

ISHIBASHI, T .

IEEE ELECTRON DEVICE LETTERS, 1991, 12 (07) :369-371

[5] ALL-SOLID SOURCE MOLECULAR-BEAM EPITAXY GROWTH OF 1.35 MU-M WAVELENGTH STRAINED-LAYER GALNASP QUANTUM-WELL LASER [J].

TOIVONEN, M ;

SALOKATVE, A ;

JALONEN, M ;

NAPPI, J ;

ASONEN, H ;

PESSA, M ;

MURISON, R .

ELECTRONICS LETTERS, 1995, 31 (10) :797-799

[6] OPERATION OF A MOLECULAR-BEAM EPITAXY MACHINE EMPLOYING A VALVED SOLID PHOSPHORUS SOURCE [J].

WICKS, GW ;

KOCH, MW ;

JOHNSON, FG ;

VARRIANO, JA ;

KOHNKE, GE ;

COLOMBO, P .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (02) :1119-1121

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