OPERATION OF A MOLECULAR-BEAM EPITAXY MACHINE EMPLOYING A VALVED SOLID PHOSPHORUS SOURCE

被引：10

作者：

WICKS, GW ^{[1
]}

KOCH, MW ^{[1
]}

JOHNSON, FG ^{[1
]}

VARRIANO, JA ^{[1
]}

KOHNKE, GE ^{[1
]}

COLOMBO, P ^{[1
]}

机构：

[1] EPI,ST PAUL,MN 55110

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 02期

关键词：

D O I：

10.1116/1.587061

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The use of an elemental source molecular-beam epitaxy (MBE) machine for the growth of phosphides requires hardware and operating procedures different from those normally encountered in the growth of arsenides. The main hardware alterations are the use of valved group V cracker sources and different pumping schemes. Operating procedures must be developed to cope with higher operating pressures and flammable deposits. High-quality phosphides and abrupt arsenide/phosphide interfaces are now possible using elemental source MBE.

引用

页码：1119 / 1121

页数：3

共 7 条

[1] ELECTRICAL CHARACTERISTICS OF INP GROWN BY MOLECULAR-BEAM EPITAXY USING A VALVED PHOSPHORUS CRACKING CELL [J].