MOLECULAR-BEAM EPITAXIAL-GROWTH OF ARSENIDE PHOSPHIDE HETEROSTRUCTURES USING VALVED, SOLID GROUP-V SOURCES

被引：16

作者：

JOHNSON, FG ^{[1
]}

WICKS, GW ^{[1
]}

VITURRO, RE ^{[1
]}

LAFORCE, R ^{[1
]}

机构：

[1] XEROX CORP,WEBSTER RES CTR,WEBSTER,NY 14580

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1993年 / 11卷 / 03期

关键词：

D O I：

10.1116/1.586755

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first arsenide/phosphide heterojunctions grown by conventional molecular-beam epitaxy with solid-source valved crackers are reported. The use of needle valves to switch the group V fluxes allows Ga0.52In0.48P/GaAs heterojunctions to be grown with virtually no intermixing between layers. Photoluminescence from quantum wells as narrow as 40 angstrom has also been observed. For comparison, conventional mechanical shutters were used to switch the group V fluxes, and the resulting layers were severely intermixed. The relative incorporation coefficients of the arsenic and phosphorous group V species were found to be temperature dependent, but there was no difference as a result of switching from tetrameric to dimeric arsenic.

引用

页码：823 / 825

页数：3

共 16 条

[1]

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